a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 o c symbol test conditions minimum typical maximum units bv cbo i c = 2.0 ma 50 v bv cer i c = 2.0 ma 50 v i ces v ce = 2.0 ma 2.0 ma bv ebo i e = 1.0 ma 3.5 v h fe v ce = 5 v i c = 200 ma 10 --- p g c v ce = 30 v p out = 3.0 w f = 2700 to 3100 mhz pulse width = 100 s duty cycle = 10% 5.7 6.5 35 db % npn rf power transistor AM82731 description: the AM82731 is a common base device designed for pulsed s-band radar amplifier applications. features include: ? input/output matching ? gold metallization ? emitter ballasting maximum ratings i c 0.9 a v cbo 50 v p diss 27 w @ t c = 25 o c t j -55 o c to+200 o c t stg -55 o c to+200 o c jc 6.5 o c/w package style 400 2l flg 1 = collector 2 & 4 = base 3 = emitter
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